UNISONIC TECHNOLOGIES CO., LTDBSS127 Power MOSFET0.021A, 600V ENHANCEMENT N-CHANNEL MOSFETn DESCRIPTIONThe UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge.n FEATURES* RDS(ON) ≤ 600? @ VGS= 4.5V, ID=0.016A RDS(ON) ≤ 500? @ VGS=10V, ID=0.016A* Ultra Low Gate Charge (Typical 140nC)* Ultra High Switching Speedn SYMBOLn ORDERING INFORMATIONOrdering NumberPackagePin AssignmentPackingLead FreeHalogen Free123BSS127L-AE2-RBSS127G-AE2-RSOT-23-3GSDTape ReelBSS127L-AE3-RBSS127G-AE3-RSOT-23GSDTape ReelNote: Pin Assignment: G: Gate S: Source D: Drainn MARKING深圳市驪微電子科技有限公司UTC供應商半導體專業(yè)供應商BSS127Power MOSFETn ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)PARAMETERSYMBOLRATINGSUNITDrain-Source VoltageVDSS600VGate-Source VoltageVGSS±20VDrain CurrentContinuousTA=25°CID0.021ATA=70°C0.017APulsed (TA=25°C)IDM0.09APeak Diode Recovery dv/dtdv/dt6kV/μsPower Dissipation (TA=25°C)PD0.3WJunction TemperatureTJ-55 ~ +150°CStorage Temperature RangeTSTG-55 ~ +150°CNote: Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.n THERMAL CHARACTERISTICSPARAMETERSYMBOLRATINGSUNITJunction to AmbientθJA325°C/Wn ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITOFF CHARACTERISTICSDrain-Source Breakdown VoltageBVDSSID=250μA, VGS=0V600VGate-Source Leakage CurrentForwardIGSSVGS=+20V, VDS=0V+10+100nAReverseVGS=-20V, VDS=0V-10-100nADrain-Source Leakage CurrentID(OFF)VGS=0V, VDS=600V, TJ=25°C0.1μAVGS=0V, VDS=600V, TJ=150°C10μAON CHARACTERISTICSGate Threshold VoltageVGS(TH)VDS=VGS, ID=8μA1.42.02.6VStatic Drain-Source On-State ResistanceRDS(ON)VGS=4.5V, ID=0.016A330600?VGS=10V, ID=0.016A310500?Forward TransconductancegFS|VDS|>2|ID|RDS(ON)MAX, ID=0.01A0.0070.015SDYNAMIC PARAMETERSInput CapacitanceCISSVGS=0V, VDS=25V, f=1.0MHz2128pFOutput CapacitanceCOSS2.43pFReverse Transfer CapacitanceCRSS1.01.5pFSWITCHING PARAMETERSTotal Gate ChargeQGVGS=0~10V, VDS=300V, ID=0.01A0.070.10nCGate to Source ChargeQGS0.310.5nCGate to Drain ChargeQGD0.651.0nCGate Plateau VoltageVplateau3.56VTurn-ON Delay TimetD(ON)VDD=300V, VGS=10V, ID=0.01A, RG=6?6.119.0nsRise TimetR9.714.5nsTurn-OFF Delay TimetD(OFF)1421nsFall-TimetF115170nsSOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICSMaximum Continuous Drain-Source Diode Forward CurrentISTA=25°C0.016AMaximum Pulsed Drain-Source Diode Forward CurrentISMTA=25°C0.09ADrain-Source Diode Forward VoltageVSDIF=0.016A, VGS=0V, TJ=25°C0.821.2VBody Diode Reverse Recovery TimetrrVR=300V, IF=0.016A,dIF/dt=100A/μs160240nsBody Diode Reverse Recovery ChargeQrr13.219.8μCNotes: 1. The Power Dissipation of the package may result in a lower continuous drain current.2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.n TEST CIRCUITS AND WAVEFORMSn TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.。